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Description
Product Description of TwinMOS 4GB DDR4 2666 Mhz SO DIMM For Laptop :
TwinMOS Technologies releases DDR4 SO-DIMM products. This product is TwinMOS 4GB DDR4 2666 Mhz SO DIMM For Laptop very good. It is compliant with JEDEC international standards and the operating voltage is only 1.2v, which saves a lot of power consumption. It reduces the heat generated by the product itself and also maintains the ambient temperature around the system.
TwinMOS 4GB DDR4 2666 Mhz SO DIMM For Laptop at Detail Specification :
| Brand | TwinMOS |
|---|---|
| Model | MDD44GB2666N |
| Capacity | 4GB |
| Type | DDR4 |
| Bus Speed | 2666 MHz |
| Number of Pin | 260 |
| CAS Latency | CL19 |
| IC Configuration | 512M x 8 |
| Voltage | 1.2V |
| Warranty | Product Life time |
TwinMOS 4GB DDR4 2666 Mhz SO DIMM For Laptop Description
TwinMOS Technologies releases DDR4 SO-DIMM products. It reduces the heat generated by the product itself and also maintains the ambient temperature around the system. It is also proven to be 100% compatible with all major laptops on the market.
| Part No. | EAN 13 | Capacity |
| MDD44GB2666N | 6291104604124 | 4 GB |
| MDD48GB3200N | 6291104604131 | 8 GB |
| MDD416GB2666N | 6291104604148 | 16 GB |
| MDD432GB2666N | 6291104606814 | 32 GB |
Brand: TwinMOS
- Capacity: 8GB
- Type: DDR4
- Bus Speed: 3200 MHz
- Number of Pins: 260
- CAS Latency: CL19
- IC Configuration: 512M x 8
- Voltage: 1.2V
- Warranty: Product Lifetime
- Part No.: EAN 13: 6291104604131
- Capacity: 8 GB
- Capacity: 16GB
- Type: DDR4
- Bus Speed: 2666 MHz
- Number of Pins: 260
- CAS Latency: CL19
- IC Configuration: 512M x 8
- Voltage: 1.2V
- Warranty: Product Lifetime
- Part No.: EAN 13: 6291104604148
- Capacity: 16 GB
- Capacity: 32GB
- Type: DDR4
- Bus Speed: 3000 MHz
- Number of Pins: 260
- CAS Latency: CL19
- IC Configuration: 512M x 8
- Voltage: 1.2V
- Warranty: Product Lifetime
- Part No.: EAN 13: 6291104604155
- Capacity: 32 GB
Description :
The TwinMOS DDR4 SO DIMM series is a reliable and efficient choice for upgrading your laptop’s memory. The TwinMOS MDD48GB3200N, with a capacity of 8GB, operates at a speedy 3200 MHz bus speed. Featuring a low CAS Latency of CL19 and an IC Configuration of 512M x 8, it ensures smooth and responsive performance.
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